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FCD360N65S3R0

Marking:FCD360N65S3R0;Package:TO-252;MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCD360N65S3R0

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP360N65S3R0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP360N65S3R0

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCPF360N65S3R0

MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCPF360N65S3R0L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCPF360N65S3R0L

MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCU360N65S3R0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCU360N65S3R0

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi
24+
D-PAK(TO-252)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
ONSEMI
NA
50
全新原裝!優(yōu)勢庫存熱賣中!
詢價(jià)
onsemi/安森美
22+
原裝封裝
20000
品質(zhì)保證,信譽(yù)至上
詢價(jià)
ON/安森美
22+
TO-252
7500
原裝正品
詢價(jià)
ON/安森美
23+
TO252
7848
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div>
詢價(jià)
ON/安森美
23+
TO252
12116
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
詢價(jià)
ON/安森美
2410+
TO-252-3
80000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價(jià)
ON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
ONSEMI/安森美
23+
TO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
更多FCD360N65S3R0供應(yīng)商 更新時(shí)間2025-1-14 16:05:00