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FDD306P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28m?@VGS=–4.5VRDS(ON)=41m?@VGS=–2.5VRDS(ON)=90m?@VGS=–1.8V ■Fast

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD306P

P-channel Enhancement Mode Power MOSFET

Features ?VDS=-30V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDN306

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications ?Batterymanagement ?Loadswitch ?Batteryprotection Features ?–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDN306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features ?–2.6A,–12V.RDS(ON)=40m?@VGS=–4.5VRDS(ON)=50m?@VGS=–2.5VRDS(ON)=80m?@VGS=–

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDN306P

SingleP-ChannelPowerTrenchMOSFET

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

Features ?–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5V RDS(ON)=50mΩ@VGS=–2.5V RDS(ON)=80mΩ@VGS=–1.8V ?Fastswitchingspeed ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications ?Batterymanagement ?Loadswitch ?Batteryprotection Features ?–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDN306P-NL

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FFM306

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FFM306

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Highcurrentcapability. ?Fastswitchi

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

詳細參數(shù)

  • 型號：

    FDD306P

  • 功能描述：

    MOSFET SPECIFIED POWER TR 1.8V PCH

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-252AA
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
FAIRCHILD/仙童
24+
SMD
203
只做原廠渠道 可追溯貨源
 詢價
FAIRCHILD/仙童
22+
SMD
8550
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
Fairchild(飛兆/仙童)
2023
10000
全新、原裝
 詢價
ONSEMI
2405+
原廠封裝
5000
原裝正品,渠道可追溯
 詢價
ON(安森美)
2023+
TO-252
4550
全新原裝正品
 詢價
onsemi(安森美)
23+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON(安森美)
23+
TO-252
13755
公司只做原裝正品,假一賠十
 詢價
ON/安森美
SMD
23+
6000
專業(yè)配單原裝正品假一罰十
 詢價
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
更多FDD306P供應(yīng)商 更新時間2025-2-3 10:12:00

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