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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FDD6N50FTM	文件：354.03 Kbytes Page：9 Pages	N-Channel MOSFET 500V, 5.5A, 1.15廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6N50FTM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6N50TF	文件：845.65 Kbytes Page：9 Pages	500VN-ChannelMOSFET Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6N50TM	文件：845.65 Kbytes Page：9 Pages	500VN-ChannelMOSFET Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6N50TM	文件：331.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD6N50TM	文件：463.96 Kbytes Page：9 Pages	N-ChannelUniFETTMMOSFET500V,6A,900m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6N50TM-WS	文件：463.96 Kbytes Page：9 Pages	N-ChannelUniFETTMMOSFET500V,6A,900m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50	文件：845.65 Kbytes Page：9 Pages	500VN-ChannelMOSFET Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50	文件：463.96 Kbytes Page：9 Pages	N-ChannelUniFETTMMOSFET500V,6A,900m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50F	文件：354.03 Kbytes Page：9 Pages	N-ChannelMOSFET500V,5.5A,1.15廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50FTU	文件：354.03 Kbytes Page：9 Pages	N-ChannelMOSFET500V,5.5A,1.15廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50TU	文件：463.96 Kbytes Page：9 Pages	N-ChannelUniFETTMMOSFET500V,6A,900m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDU6N50TU	文件：845.65 Kbytes Page：9 Pages	500VN-ChannelMOSFET Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB6N50	文件：762.07 Kbytes Page：9 Pages	500VN-ChannelMOSFET Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB6N50TM	文件：885.29 Kbytes Page：9 Pages	600VN-ChannelMOSFET Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD6N50C	文件：305.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD6N50C	文件：687.06 Kbytes Page：9 Pages	TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietaryplanarstripe,DMOStechnology	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD6N50CTM	文件：547.29 Kbytes Page：8 Pages	N-ChannelQFETMOSFET500V,4.5A,1.2	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI6N50	文件：762.07 Kbytes Page：9 Pages	500VN-ChannelMOSFET Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP6N50	文件：745.4 Kbytes Page：8 Pages	500Vn-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號(hào)：
FDD6N50FTM
功能描述：
MOSFET 500V N-Channel
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市坤融電子科技有限公司	FDD6N50FTM	FAIRCHILD/仙童	24+	TO252	8950	BOM配單專家,發(fā)貨快,價(jià)格低	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	FDD6N50FTM	onsemi	24+	TO-252AA	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	FDD6N50FTM	onsemi(安森美)	23+	TO-252	9555	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市中福國(guó)際管理有限公司	FDD6N50FTM	ONSEMI/安森美	23+	DPAK-3TO-252-3	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FDD6N50FTM	FAI	24+		10000		詢價(jià)
深圳市永貝爾科技有限公司	FDD6N50FTM	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市達(dá)恩科技有限公司	FDD6N50FTM	ONSemiconductor	18+	NA	3658	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市華來(lái)深電子有限公司	FDD6N50FTM	FAIRCHI	23+	TO-252	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市振宏微科技有限公司	FDD6N50FTM	fsc	23+	NA	2986	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	FDD6N50FTM	FAIRCHILD	22+23+	TO252	8053	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)

更多FDD6N50FTM供應(yīng)商更新時(shí)間2025-1-11 16:36:00

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