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IXFE44N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?Fastintrins

IXYS

IXYS Corporation

IXFH44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140m? trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFH44N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK44N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFK44N50F

HiPerRFPowerMOSFETsF-ClassMegaHertzSwitchingSingleMOSFETDie

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features RFCapableMOSFETs DoubleMetalProcessforLowGateResistance AvalancheRated LowPackageInductance FastIntrinsicRectifier

IXYS

IXYS Corporation

IXFK44N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140m? trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFK44N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK44N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK44N50Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFN44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFN44N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN44N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Internationalst

IXYS

IXYS Corporation

IXFR44N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

VDSS=500V ID25=24A RDS(on)≤150m? trr≤200ns N-ChannelEnhancement AvalancheRated FastIntrinsicDiode Features Internationalstandardisolatedpackage ULrecognizedpackage SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -I

IXYS

IXYS Corporation

IXFR44N50Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

IXFT44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140m? trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFX44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX44N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

IXYS

IXYS Corporation

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
21+
TO-247
261
原裝現(xiàn)貨假一賠十
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FSC
23+
TO247
3000
原裝正品假一罰百!可開增票!
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FSC
10+
TO-3P
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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FAIRCHILD
23+
TO-247
261
全新原裝正品現(xiàn)貨,支持訂貨
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FAIRCHILD
24+
TO-247
56000
公司進口原裝現(xiàn)貨 批量特價支持
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FAIRCHILD/仙童
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
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FAIRCHILD/仙童
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FAIRCHILD/仙童
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
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24+
8866
詢價
FAIRCHILD
23+
TO-3PTO-3PF
8600
全新原裝現(xiàn)貨
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更多FDH44N50F供應商 更新時間2025-1-11 14:01:00

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