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IXFN44N50

HiPerFET Power MOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFN44N50

HiPerFET Power MOSFETs

IXYS

IXYS Corporation

IXFN44N50Q

HiPerFET Power MOSFETs Q-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Internationalst

IXYS

IXYS Corporation

IXFN44N50U2

HiPerFET Power MOSFETs

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features PopularBuck&Boostcircuittopologies InternationalstandardpackageminiBLOCSOT-227B Aluminiumnitrideisolation -highpowerdissipation Isolationvoltage3000V~ LowRDS(on)HDMOS?p

IXYS

IXYS Corporation

IXFN44N50U3

HiPerFET Power MOSFETs

Buck&BoostConfigurationsforPFC&MotorControlCircuits Features PopularBuck&Boostcircuittopologies InternationalstandardpackageminiBLOCSOT-227B Aluminiumnitrideisolation -highpowerdissipation Isolationvoltage3000V~ LowRDS(on)HDMOS?p

IXYS

IXYS Corporation

IXFN44N50Q_03

HiPerFET Power MOSFETs Q-Class

IXYS

IXYS Corporation

IXFR44N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

VDSS=500V ID25=24A RDS(on)≤150m? trr≤200ns N-ChannelEnhancement AvalancheRated FastIntrinsicDiode Features Internationalstandardisolatedpackage ULrecognizedpackage SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -I

IXYS

IXYS Corporation

IXFR44N50Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

IXFT44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140m? trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFX44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN44N50

  • 功能描述：

    MOSFET 500V 44A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
IXYS/艾賽斯
16+
module
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
IXYS
24+
SOT-227BminiBLOC
21
詢價(jià)
IXYS
23+
模塊
3562
詢價(jià)
IXYS
23+
模塊
900
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IXYS
23+
MOSFETN-CH500V44ASOT-227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
23+
模塊
5000
原裝正品,假一罰十
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
SOT-227
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
IXYS
21+
模塊
12588
原裝正品,一級(jí)品牌代理
 詢價(jià)
更多IXFN44N50供應(yīng)商 更新時(shí)間2025-1-22 13:02:00

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