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FDI030N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI030N06

N-Channel PowerTrench? MOSFET 60V, 193A, 3.2mW

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMS030N06B

N-ChannelPowerTrench?MOSFET60V,100A,3m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP030N06

N-ChannelPowerTrench?MOSFET60V,193A,3.2m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP030N06B

N-ChannelPowerTrench?MOSFET60V,195A,3.1m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO-8FL60V,29.7m,19A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD030N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Ha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFWS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RSR030N06

Nch60V3APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR030N06

4VDriveNchMOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR030N06FRA

Nch60V3APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR030N06HZG

Nch60V3ASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSR030N06TL

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FDI030N06

  • 功能描述：

    MOSFET NCH 60V 3.0Mohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi
24+
I2PAK(TO-262)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
FAIRCHILD/仙童
24+
TO262
1630
原廠授權(quán)代理 價(jià)格絕對(duì)優(yōu)勢
 詢價(jià)
onsemi(安森美)
23+
TO-262
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
Fairchild
23+
I2-PAK
7750
全新原裝優(yōu)勢
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ONSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價(jià)
FAIRCHILD
22+23+
TO262
8374
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
FSC
1844+
TO262
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON/安森美
24+
I2PAK-3
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
更多FDI030N06供應(yīng)商 更新時(shí)間2024-12-23 20:18:00

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