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首頁 >NVTFS030N06CTAG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NVTFS030N06CTAG | MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelPowerTrench?MOSFET60V,193A,3.2mW | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-ChannelPowerTrench?MOSFET60V,100A,3m? | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelPowerTrench?MOSFET60V,193A,3.2m? | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-ChannelPowerTrench?MOSFET60V,195A,3.1m | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-Power,DualN-Channel,DUALSO-8FL60V,29.7m,19A Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD030N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Ha | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Nch60V3APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
4VDriveNchMOSFET ■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch60V3APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch60V3ASmallSignalMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
onsemi |
24+ |
8-WDFN(3.3x3.3) |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
ON/安森美 |
22+ |
WDFN-8 |
4000 |
原裝正品 |
詢價 | ||
ON/安森美 |
23+ |
WDFN-8 |
9868 |
原廠可訂貨,技術支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
ON/安森美 |
23+ |
WDFN-8 |
14136 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ONSEMI/安森美 |
23+ |
DFNW83.3x3.3 |
360000 |
專業(yè)供應MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON/安森美 |
22+ |
WDFN-8 |
9000 |
原裝正品,支持實單! |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON安森美 |
22+ |
WDFN-8 |
10000 |
原裝正品,渠道現(xiàn)貨 |
詢價 | ||
ON安森美 |
24+ |
WDFN-8 |
10000 |
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理 |
詢價 |
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