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FSAV430QSC

LowVoltage1.1GHz4Channel2:1VideoSwitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FSAV430QSCX

LowVoltage1.1GHz,4-Channel,2:1VideoSwitch

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FSL430D

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430R

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS430D

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS430R

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYE430D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

FSYE430R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

GFC430

NChannelPowerMOSFETwithlowRDS(on)

GSG

Gunter Seniconductor GmbH.

GME430R

RedPointPro-2.4GHzGyroscopicPresentationMousewithLaserPointer

IOGEAR

iogear

詳細(xì)參數(shù)

  • 型號：

    FDMA430NZ

  • 功能描述：

    MOSFET 2.5V SINGLE NCH SPECIFIED POWER

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
25+
DFN
154731
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
ON/安森美
23+
WDFN-6
3524
原裝正品,現(xiàn)貨庫存,1小時(shí)內(nèi)發(fā)貨
 詢價(jià)
onsemi
24+
6-MicroFET(2x2)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ON
21+
DFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
ON/安森美
22+
BGA
21000
原裝正品
 詢價(jià)
ON/安森美
20+
DFN2020-6
120000
原裝正品 可含稅交易
 詢價(jià)
ON/安森美
23+
WDFN-6
14316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
ONSEMI
24+
N/A
10000
只做原裝,實(shí)單最低價(jià)支持
 詢價(jià)
ON/安森美
24+
DFN2*2
504583
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
Fairchild
24+
MicroFET-6
7500
詢價(jià)
更多FDMA430NZ供應(yīng)商 更新時(shí)間2025-3-28 17:39:00

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