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FDMC4435BZ

P-Channel Power Trench? MOSFET -30V, -18A, 20.0m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-18A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

30VP-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mW@VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDS4435A

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FDMC4435BZ

  • 功能描述：

    MOSFET -30V P-Channel PowerTrench

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi
24+
8-MLP(3.3x3.3)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
FAIRCHILD/仙童
23+
DFN
69000
全新原裝現(xiàn)貨熱賣/代理品牌/可申請(qǐng)樣品和規(guī)格書
 詢價(jià)
2020+
9500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ON/安森美
24+
QFN8
136050
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
 詢價(jià)
ON
21+
POWER33
6000
全新原裝公司現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
24+
QFN8
4000
只做原廠渠道 可追溯貨源
 詢價(jià)
FAIRCHILD/仙童
21+
QFN8
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
ON
23+
POWER33
6000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ON/安森美
22+
QFN8
30000
原裝正品
 詢價(jià)
ON/安森美
20+
WDFN83.3x3.3
120000
原裝正品 可含稅交易
 詢價(jià)
更多FDMC4435BZ供應(yīng)商 更新時(shí)間2025-3-28 18:23:00

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