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FDN359A

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=27V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDN359A

N-Channel 30 V (D-S) MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359AN

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359AN

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=27V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDN359AN

N-Channel 30 V (D-S) MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359B

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDN359B

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDN359BN

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FW359

FW359

SANYOSanyo

三洋三洋電機(jī)株式會社

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

GTM

勤益投資控股股份有限公司

GSC-359

Two-PieceGroundingConnectorsforShieldedandCoaxialCable

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GSR-359

Two-PieceGroundingConnectorsforShieldedandCoaxialCable

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HVC359

VariableCapacitanceDiodeforVCXO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC359

VariableCapacitanceDiodeforVCXO

FEATURES ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

HVC359

VariableCapacitanceDiodeforVCO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD359

VariableCapacitanceDiodeforVCXO

Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.

ZHAOXINGWEI

Zhaoxingwei Electronics ., Ltd

詳細(xì)參數(shù)

  • 型號：

    FDN359A

  • 功能描述：

    MOSFET SSOT-3 N-CH 30V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
23+
SOT-23
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
FAIRCHILD/仙童
23+
SOT-23
24190
原裝正品代理渠道價(jià)格優(yōu)勢
 詢價(jià)
FAIRCHILD/仙童
21+
SOT-23
30000
優(yōu)勢供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
 詢價(jià)
FAIRCHILD/仙童
22+
SOT-23
18000
原裝正品
 詢價(jià)
FSC
2015+
SOT-23
28989
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
國產(chǎn)MOS
2010
SOT-23
50000
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價(jià)
FAIRCHILD
16+
SOT23
2380
原裝現(xiàn)貨假一罰十
 詢價(jià)
FAIRCHILD/FSC/仙童飛兆半
24+
SOT-23
252200
新進(jìn)庫存/原裝
 詢價(jià)
Fairchild
23+
SuperSOT?-3
7750
全新原裝優(yōu)勢
 詢價(jià)
FAIRCHILD
17+
原廠原封
6523
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品
 詢價(jià)
更多FDN359A供應(yīng)商 更新時間2024-11-15 17:04:00

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