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FDP61N20中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FDP61N20
廠商型號(hào)

FDP61N20

功能描述

DESIGN/PROCESS CHANGE NOTIFICATION

文件大小

298.83 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 23:00:00

FDP61N20規(guī)格書詳情

Description

SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features

? 650 V @TJ = 150°C

? Max. RDS(on) = 380 mΩ

? Ultra Low Gate Charge ( Typ. Qg = 34 nC)

? Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF)

? 100 Avalanche Tested

Applications

? LCD / LED / PDP TV Lighting

? Solar Inverter

? AC-DC Power Supply

產(chǎn)品屬性

  • 型號(hào):

    FDP61N20

  • 功能描述:

    MOSFET 200V N-Channel MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ON/安森美
23+
DIP
11048
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
詢價(jià)
FSC
2020+
TO220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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ON/安森美
2023
3800
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ON/安森美
18+
TO-220
300
詢價(jià)
ON
21+
TO-220
12261
原裝現(xiàn)貨假一賠十
詢價(jià)
FAIRCHILD
24+
TO-220
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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FAIRCHILDONSEMICONDUCTOR
23+
NA
25630
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ON/安森美
23+
DIP
15316
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FAIRCHILD
1836+
TO-220
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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FAIRCHILD
22+23+
TO220
12391
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