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FDP6690S中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書

FDP6690S
廠商型號

FDP6690S

功能描述

30V N-Channel PowerTrench SyncFET

文件大小

88.46 Kbytes

頁面數(shù)量

5

生產廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導體

中文名稱

飛兆/仙童半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-13 18:59:00

FDP6690S規(guī)格書詳情

General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.

Features

? 21 A, 30 V. RDS(ON) = 15.5 mW @ VGS = 10 V RDS(ON) = 23.0 mW @ VGS = 4.5 V

? Includes SyncFET Schottky body diode

? Low gate charge (11nC typical)

? High performance trench technology for extremely low RDS(ON) and fast switching

? High power and current handling capability

產品屬性

  • 型號:

    FDP6690S

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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