FDS6690中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
FDS6690規(guī)格書詳情
General Description
This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
■ 10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V RDS(ON) = 0.0200 W @ VGS = 4.5 V.
■ Optimized for use in switching DC/DC converters with PWM controllers.
■ Very fast switching .
■ Low gate charge (Qg typ = 13 nC).
產(chǎn)品屬性
- 型號:
FDS6690
- 功能描述:
MOSFET USE 512-FDS6690A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
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