FF225R17ME3分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

FF225R17ME3屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由英飛凌科技股份公司制造生產(chǎn)的FF225R17ME3晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動(dòng)斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。

The MA200E12/17 module adapter board offers the following features:

? Dual channel IGBT driver together with 2ED300E17-SFO (detailed description in AN2007-05)

and 2ED300C17-S /-ST EiceDRIVER?

? Electrically and mechanically suitable for EconoDual? 3 modules family

? Operating temperature (design target) minimum value -40°C

? Different gate resistor values for turning-on and -off are possible

? IGBTs are secured against temporary VCE overvoltages during turn-off (Active Clamping)

? Diodes for IGBT desaturation monitoring implemented (short circuit protection)

? All components, except connectors, are surface mounted devices (SMD) with lead free 260°C

soldering profile

? PCB is designed to fulfil the requirements of IEC61800-5-1, pollution degree 2, overvoltage category III

(creepage – 11 mm)

When the MA200E12/17 is not used with 2ED300E17-SFO adapter board and 2ED300C17-S /-ST

EiceDRIVER? these following features might be useful:

? Gate-emitter amplifier input resistance is larger than 45 Ω

? Can be used with max. ±20V isolated power supply (due to IGBT short circuit performances a value of

max. +16V is suggested)

? Asymmetric power supply is also allowed e.g. -8 V and +16 V

? Input PWM voltage level should be selected according to power supply voltage level (in the same range

but not higher)