| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FG4105 | 包裝：散裝 類別：RF/IF，射頻/中頻和 RFID RF 天線 描述：RF ANT 415MHZ WHIP STR N FEM 76\ | TE Connectivity Laird TE Connectivity Laird | TE Connectivity Laird | |
PNPEpitaxialSiliconTransistor SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=4.7K?,R2=10K?) ?ComplementtoFJV3105R | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
40VP-ChannelMOSFET Features ?AdvancedTrenchMOSTechnology ?LowGateCharge ?100EASGuaranteed ?GreenDeviceAvailable Applications ?LoadSwitches ?HardSwitchingandHighSpeedCircuit | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆（LEM）集團(tuán) | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 萊姆電子萊姆（LEM）集團(tuán) | LEM | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤24.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=3.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
60VN-ChannelIRFL4105 GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A?? | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
55VN-ChannelMOSFET Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號：
FG4105
- 制造商：
TE Connectivity Laird
- 類別：
RF/IF，射頻/中頻和 RFID > RF 天線
- 包裝：
散裝
- 頻率組：
UHF（300MHz ~ 1GHz）
- 頻率（中心/帶）：
415MHz
- 頻率范圍：
410MHz ~ 420MHz
- 天線類型：
鞭狀，直形
- 增益：
5dBd
- 端接：
N 型母頭
- 安裝類型：
支架安裝
- 描述：
RF ANT 415MHZ WHIP STR N FEM 76\
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LAIRD |
20+ |
射頻元件 |
55 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
TI |
23+ |
QFN-48 |
53261 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
SOT-23 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
AMPHENOL/安費(fèi)諾 |
2420+ |
/ |
254575 |
一級代理,原裝正品! |
詢價(jià) | ||
TE Connectivity |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價(jià)格,現(xiàn)貨或訂貨 |
詢價(jià) | ||
EATON(伊頓) |
23+ |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價(jià) | |||
MITSUBISHI |
24+ |
MODULE |
2100 |
一級代理/全新原裝現(xiàn)貨 供應(yīng)!!! |
詢價(jià) | ||
MITSUBISHI |
23+ |
MODULE |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
MITSUBISHI |
23+ |
MODULE |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
