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首頁(yè) >FGB20N6S2DT>規(guī)格書(shū)列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
FGB20N6S2DT	文件：231.95 Kbytes Page：9 Pages	600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGB20N6S2	文件：183.25 Kbytes Page：8 Pages	600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGB20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGB20N6S2D	文件：232.38 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH20N6S2	文件：183.25 Kbytes Page：8 Pages	600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH20N6S2D	文件：232.38 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGP20N6S2	文件：183.25 Kbytes Page：8 Pages	600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGP20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

詳細(xì)參數(shù)

型號(hào)：
FGB20N6S2DT
功能描述：
IGBT 晶體管 600V N-Ch IGBT SMPS II Series
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集電極—發(fā)射極最大電壓
VCEO：
650 V
集電極—射極飽和電壓：
2.3 V
柵極/發(fā)射極最大電壓：
20 V 在25
C的連續(xù)集電極電流：
150 A
柵極—射極漏泄電流：
400 nA
功率耗散：
187 W
封裝/箱體：
TO-247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	FGB20N6S2DT	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
瀚佳科技(深圳)有限公司	FGB20N6S2DT	FAIRCHILD	24+		35200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FGB20N6S2DT	FAIRCHILD/仙童	23+	TO	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	FGB20N6S2DT	FAIRCHILD/仙童	22+	TO	6000	十年配單,只做原裝	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	FGB20N6S2DT	FAIRCHILD/仙童	22+	TO	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	FGB20N6S2DT	FAIRCHILD/仙童	22+	TO	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市安羅世紀(jì)電子有限公司	FGB20N6S2DT	FAIRCHILD	2023+	SMD	1054	安羅世紀(jì)電子只做原裝正品貨	詢價(jià)
深圳市科芯源微電子有限公司	FGB20N6S2DT	FAIRCHILD/仙童	24+	TO263	58000	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!	詢價(jià)
深圳市宏捷佳電子科技有限公司	FGB20N6S2DT	仙童	24+	TO	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FGB20N6S2T	FAIRCHILD	24+	TO263	7596		詢價(jià)

更多FGB20N6S2DT供應(yīng)商更新時(shí)間2025-1-24 17:09:00

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