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FGB40N6S2中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書

FGB40N6S2
廠商型號

FGB40N6S2

功能描述

600V, SMPS II Series N-Channel IGBT

文件大小

176.34 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導體

中文名稱

飛兆/仙童半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-10 20:00:00

FGB40N6S2規(guī)格書詳情

General Description

The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

? Power Factor Correction (PFC) circuits

? Full bridge topologies

? Half bridge topologies

? Push-Pull circuits

? Uninterruptible power supplies

? Zero voltage and zero current switching circuits

Features

? 100kHz Operation at 390V, 24A

? 200kHZ Operation at 390V, 18A

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125℃

? Low Gate Charge . . . . . . . . . 35nC at VGE = 15V

? Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

? UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ

? Low Conduction Loss

產(chǎn)品屬性

  • 型號:

    FGB40N6S2

  • 功能描述:

    IGBT 晶體管 Sgl 600V N-Ch

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

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