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首頁(yè)>FGH40T120SQDNL4>芯片詳情
FGH40T120SQDNL4 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 ONSEMI/安森美半導(dǎo)體
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原廠料號(hào):FGH40T120SQDNL4品牌:ON(安森美)
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品
FGH40T120SQDNL4是分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單。制造商ON(安森美)/onsemi生產(chǎn)封裝標(biāo)準(zhǔn)封裝/TO-247-4的FGH40T120SQDNL4晶體管 - UGBT、MOSFET - 單單 IGBT(絕緣柵雙極晶體管)是一種具有三個(gè)端子的多層半導(dǎo)體器件,能夠處理大電流,具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。
產(chǎn)品屬性
更多- 類型
描述
- 產(chǎn)品編號(hào):
FGH40T120SQDNL4
- 制造商:
onsemi
- 類別:
- 包裝:
管件
- IGBT 類型:
溝槽型場(chǎng)截止
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.95V @ 15V,40A
- 開(kāi)關(guān)能量:
1.4mJ(開(kāi)),1.1mJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
46ns/220ns
- 測(cè)試條件:
600V,40A,10 歐姆,15V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-4
- 供應(yīng)商器件封裝:
TO-247-4L
- 描述:
IGBT 1200V 40A UFS FOR SO
供應(yīng)商
- 企業(yè):
深圳市中福國(guó)際管理有限公司
- 商鋪:
- 聯(lián)系人:
張先生
- 手機(jī):
13266709901
- 詢價(jià):
- 電話:
0755-82571134
- 地址:
深圳市福田區(qū)福虹路世貿(mào)廣場(chǎng)B座22F
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