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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

MSD30P06

P-Channel60-V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

MTB30P06

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06KFP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB30P06V

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP??hannelD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP??hannelD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTBV30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP30P06

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP30P06V

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP30P06V

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP30P06V

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTP30P06VG

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NCE30P06J

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

RFG30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

Intersil

Intersil Corporation

RFP30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

Intersil

Intersil Corporation

RFP30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SF30P06C

GlassPassivatedSuperFastRecoveryRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

SPD30P06

-60VP-ChannelMOSFET

Features ·P-Channel ·Enhancementmode ·Avalancherated ·dv/dtrated ·175°Coperatingtemperature ProductSummary RDS(on)=75m VDS(V)=-60V ID=-30A(VGS=-10V) (VGS=-10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

供應商型號品牌批號封裝庫存備注價格
IR
ROHS全新原裝
TO-263
9782
原裝現(xiàn)貨在線咨詢樣品※技術(shù)支持專業(yè)電子元器件授權(quán)
 詢價
IR
24+
TO-263
3
詢價
IR
22+
TO-263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-263
7000
詢價
JAE Electronics- Inc.
2022+
1
全新原裝 貨期兩周
 詢價
JAE
23+
Connector
51762
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
JAE
23+
NA/原裝
39256
代理-優(yōu)勢-原裝-正品-現(xiàn)貨*期貨
 詢價
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
JAE
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
更多FIS30P06供應商 更新時間2025-1-14 14:39:00

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