零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FJN3303TA | 包裝:管件 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 400V 1.5A TO92-3 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
DualP-Ch30VFastSwitchingMOSFETs Description TheFKS3303isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKS3303meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved. | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK | ||
4&6CHANNELCHARGEPUMPSFORWHITELEDBIAS | FOSLINK FOSLINK SEMICONDUCTOR CO.,LTD | FOSLINK | ||
4&6CHANNELCHARGEPUMPSFORWHITELEDBIAS | FOSLINK FOSLINK SEMICONDUCTOR CO.,LTD | FOSLINK | ||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage ●HighSpeedSwitchingTime | FS First Silicon Co., Ltd | FS | ||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage ●HighSpeedSwitchingTime | FS First Silicon Co., Ltd | FS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
MULTIPLEOUTPUTPROGRAMMABLELINEARD.C.POWERSUPPLY FEATURES *2,3,and4IndependentsolatedOutput *4LEDDisplaySets:3DigitsAfter DecimalPoint(GPD-23035/33035/43035) *MinimumResolution: ‘GPD-23035/33035/43035(1mV/1mA) ‘GPD-3303D(100mV/10mA) *DigitalPanelControl(RotaryEncoder Switch,RubberKeyWithIndicator) *User-frien | GWINSTEKGood Will Instrument Co., Ltd. 固緯電子固緯電子實業(yè)股份有限公司 | GWINSTEK | ||
MULTIPLEOUTPUTPROGRAMMABLELINEARD.C.POWERSUPPLY FEATURES *2,3,and4IndependentsolatedOutput *4LEDDisplaySets:3DigitsAfter DecimalPoint(GPD-23035/33035/43035) *MinimumResolution: ‘GPD-23035/33035/43035(1mV/1mA) ‘GPD-3303D(100mV/10mA) *DigitalPanelControl(RotaryEncoder Switch,RubberKeyWithIndicator) *User-frien | GWINSTEKGood Will Instrument Co., Ltd. 固緯電子固緯電子實業(yè)股份有限公司 | GWINSTEK | ||
195WATTLINEAR | POWERBOX Powerbox manufactures | POWERBOX | ||
MULTIPLEOUTPUTLINEARD.C.POWERSUPPLY | GWINSTEKGood Will Instrument Co., Ltd. 固緯電子固緯電子實業(yè)股份有限公司 | GWINSTEK | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號:
FJN3303TA
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
管件
- 晶體管類型:
NPN
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
3V @ 500mA,1.5A
- 電流 - 集電極截止(最大值):
10μA(ICBO)
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
14 @ 500mA,2V
- 頻率 - 躍遷:
4MHz
- 工作溫度:
150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-226-3,TO-92-3(TO-226AA)成形引線
- 供應(yīng)商器件封裝:
TO-92-3
- 描述:
TRANS NPN 400V 1.5A TO92-3
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Fairchild |
24+ |
TO92 |
20000 |
原裝正品現(xiàn)貨 |
詢價 | ||
ON Semiconductor |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 | ||
Fairchild |
23+ |
33500 |
詢價 | ||||
onsemi |
24+ |
TO-226-3 TO-92-3(TO-226AA) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
Fairchild |
23+ |
TO-92 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-92 |
255 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
FAIRCHILD/仙童 |
2022 |
TO-92 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
FSC/ON |
23+ |
原包裝原封□□ |
79930 |
原裝進(jìn)口特價供應(yīng)QQ1304306553更多詳細(xì)咨詢庫存 |
詢價 |
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