首頁 >FMH23N50ESCQ-P>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
FMH23N50ESCQ-P
- 制造商:
Fuji Electric
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FUJI |
24+ |
TO-3P |
3000 |
全新原裝環(huán)保現(xiàn)貨 |
詢價 | ||
FUJI |
2021++ |
TO-3P |
5850 |
全新原裝現(xiàn)貨 |
詢價 | ||
FUJI/富士電機(jī) |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢價 | ||
FUJI/富士電機(jī) |
2022+ |
原廠封裝 |
25000 |
100%進(jìn)口原裝正品現(xiàn)貨,公司原裝現(xiàn)貨眾多歡迎加微信咨 |
詢價 | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢價 | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
FUJITSU/富士通 |
23+ |
TO3P |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FUJITSU/富士通 |
24+ |
TO3P |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價 | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
128900 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價 |
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