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FMV13N60E

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FMV13N60ES

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

HFP13N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS13N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

KF13N60N

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=13A ?Drain-SourceONRes

KECKEC CORPORATION

KEC株式會社

SGH13N60UFD

FEATURES

FEATURES *HighSpeedSwitching *LowSaturationVoltage:VCE(sat)=1.95V(@Ic=6.5A) *HighInputImpedance *CO-PAK,IGBTwithFRD:Trr=37nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoControls *PowerSupply *LampBallast

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP13N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP13N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP13N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeed

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP13N60UFTU

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    FMV13N60E

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJITSU
17+
TO-220F
12000
確保原裝現(xiàn)貨,實(shí)單價格支持!
 詢價
FUJITSU
2022+
SOP-8
8000
詢價
FUJITSU
17+
TO-220F
12000
只做原裝,支持實(shí)單
 詢價
FUJITSU/富士通
23+/24+
TO-220F
9865
原裝MOS管(場效應(yīng)管).
 詢價
FUJI
17+
TO-220F
6200
詢價
FUJI
22+23+
TO-220F
16714
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
FUJI
2020+
TO-220F
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
FUJI/富士電機(jī)
22+
TO-220F
5623
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
FUJI
21+
TO-220F
25157
原裝現(xiàn)貨假一賠十
 詢價
FUJI/富士電機(jī)
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多FMV13N60E供應(yīng)商 更新時間2025-2-21 17:07:00

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