首頁(yè) >FMV17N60ES>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FMV17N60ES | N-CHANNEL SILICON POWER MOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | |
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET(SWITCHMODEPOWERSUPPLY) | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
FMV17N60ES
- 制造商:
FUJI
- 制造商全稱:
Fuji Electric
- 功能描述:
N-CHANNEL SILICON POWER MOSFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FUJI/富士電機(jī) |
17+ |
TO-220F |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
FUJI |
2016+ |
TO220F |
5562 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十! |
詢價(jià) | ||
FUJI |
22+23+ |
TO220F |
6759 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
FUJI |
2023+ |
TO220F |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SMC(DO-214AB) |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
FUJI |
2022+ |
TO220F |
20000 |
只做原裝進(jìn)口現(xiàn)貨.假一罰十 |
詢價(jià) | ||
FUJI/富士電機(jī) |
23+ |
N/A |
11550 |
FUJI/富士電機(jī)系列在售 |
詢價(jià) | ||
FUJITSU/富士通 |
24+ |
TO220F |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
FUJI/富士電機(jī) |
23+ |
N/A |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) | ||
FUJITSU/富士通 |
23+ |
NA/ |
7250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫(kù)存
更多- FMV19N60ES
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- FMW-41-0001-M5
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