| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
400V,23AN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
20A竊?00VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司 | KIA | ||
N-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
400V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
400VN-ChannelMOSFET Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODES Diodes Incorporated | DIODES | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4) | DIODES Diodes Incorporated | DIODES | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
GeneralDescription GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細(xì)參數(shù)
- 型號：
FQAF20N40
- 功能描述：
MOSFET DISC BY MFG 7/03
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
TO-3P |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-3P |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
仙童 |
24+ |
TO-3P |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
仙童 |
06+ |
TO-247F |
800 |
原裝 |
詢價 | ||
FAIRC |
2020+ |
TO-3PF |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
ON |
1503+ |
TO-3P |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-3PF |
15300 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-3P-3 整包 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
相關(guān)規(guī)格書
更多- FQAF22N30
- FQAF26N30
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- FQAF40N25
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- FQAF47P06
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- FQB11N40CTM
- FQB11P06
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- FQB12N50TM_AM002
- FQB12N60CTM
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- FQB12P10M
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- FQB12P20TM
- FQB13N06L
- FQB13N06TM
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- FQB13N10TM
- FQB13N50C
- FQB13N50CTM
- FQB140N03L
- FQB14N15
- FQB14N30
- FQB15P12TM
- FQB16N25
相關(guān)庫存
更多- FQAF22P10
- FQAF27N25
- FQAF33N10
- FQAF34N20
- FQAF34N25
- FQAF44N08
- FQAF46N15
- FQAF48N20
- FQAF58N08
- FQAF65N06
- FQAF6N80
- FQAF70N08
- FQAF70N15
- FQAF7N80
- FQAF85N06
- FQAF90N08
- FQAF9N90
- FQB10N20
- FQB10N20CTM
- FQB10N20LTM
- FQB10N50CFTM_WS
- FQB10N60CTM
- FQB11N40C
- FQB11N40TM
- FQB11P06_04
- FQB12N20
- FQB12N20LTM
- FQB12N50TM
- FQB12N60C
- FQB12N60TM
- FQB12P10
- FQB12P10TM
- FQB12P20_08
- FQB13N06
- FQB13N06LTM
- FQB13N10
- FQB13N10LTM
- FQB13N50
- FQB13N50C_08
- FQB13N50TM
- FQB140N03LTM
- FQB14N15TM
- FQB14N30TM
- FQB16N15TM
- FQB16N25C
