首頁 >FQB11P06TM>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQB11P06TM | P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
P-channelEnhancementModePowerMOSFET Features ?VDS=-60V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60VP-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
60VP-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
60VP-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數(shù)
- 型號：
FQB11P06TM
- 功能描述：
MOSFET 60V P-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
24+ |
D2PAK(TO-263) |
30000 |
晶體管-分立半導體產品-原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-263 |
5387 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
onsemi(安森美) |
23+ |
D2PAK |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ONSEMI/安森美 |
23+ |
TO-263-2 |
360000 |
專業(yè)供應MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
FSC |
1415+ |
TO-263 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | ||
FSC |
24+ |
TO-263 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
ONSemiconductor |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
FAIRCHILD |
22+23+ |
TO263 |
32775 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
FSC |
1844+ |
TO-263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 |
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