第一主板网韵母攻略,2022无码视频在线

首頁 >FQD11P06>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQD11P06	文件：615.94 Kbytes Page：9 Pages	60V P-Channel MOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD11P06	文件：1.18404 Mbytes Page：9 Pages	P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD11P06	文件：353.73 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQD11P06TM	文件：1.18404 Mbytes Page：9 Pages	P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD11P06TM	文件：912.3 Kbytes Page：4 Pages	P-channel Enhancement Mode Power MOSFET Features ?VDS=-60V,ID=-20A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD11P06_09	文件：856.8 Kbytes Page：9 Pages	60V P-Channel MOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD11P06TM	文件：990.08 Kbytes Page：8 Pages	P-Channel 60-V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
FQI11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP11P06	文件：374 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQP11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU11P06	文件：377.67 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQU11P06	文件：1.66632 Mbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
FQU11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU11P06TU	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
KSM11P06	文件：1.735 Mbytes Page：6 Pages	60VP-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMB11P06	文件：640.36 Kbytes Page：4 Pages	Greendeviceavailable.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMD11P06	文件：1.5235 Mbytes Page：8 Pages	60VP-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

12 >>>

詳細(xì)參數(shù)

型號(hào)：
FQD11P06
制造商：
Fairchild Semiconductor Corporation
功能描述：
MOSFET P D-PAK

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市歐立現(xiàn)代科技有限公司	FQD11P06	FAIRCHIL	24+	TO-252-2	5620	全新原裝現(xiàn)貨,歡迎詢購!!	詢價(jià)
深圳市福田區(qū)億興成電子商行	FQD11P06	ON			240	原裝現(xiàn)貨	詢價(jià)
深圳市潤聯(lián)芯城科技有限公司	FQD11P06	仙童	13+	TO-252	49	只做原裝正品	詢價(jià)
深圳市匯萊威科技有限公司	FQD11P06	ON/安森美	24+	TO-252	505348	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
深圳市中福國際管理有限公司	FQD11P06	ONSEMI/安森美	23+	TO-252	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低	詢價(jià)
深圳市星佑電子有限公司	FQD11P06	仙童	06+	TO-252	8000	原裝	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FQD11P06	FAIRCHILD	24+	SOT-252	12500		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	FQD11P06	原廠	23+	TO-252	10000	原裝正品,假一罰十	詢價(jià)
深圳市博浩通科技有限公司	FQD11P06	FAIRCHILD	23+	TO-252	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	FQD11P06	FAIRC	12+	TO-252(DPAK)	15000	全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)

更多FQD11P06供應(yīng)商更新時(shí)間2024-12-31 15:54:00

詳細(xì)參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存