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FQI4N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP4N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF4N60

600VN-ChannelMOSFET

DESCRIPTION TheseN-Channelenhancementmodepowerfieldeffecttransistorsareproducedusingproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TGS

Tiger Electronic Co.,Ltd

FQPF4N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF4N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF4N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperform

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF4N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FTK4N60D

4Amps,600VoltN-CHANNELPOWERMOSFET

FS

First Silicon Co., Ltd

FTK4N60F

4Amps,600VoltN-CHANNELPOWERMOSFET

FS

First Silicon Co., Ltd

FTK4N60I

4Amps,600VoltN-CHANNELPOWERMOSFET

FS

First Silicon Co., Ltd

詳細參數

  • 型號：

    FQB4N60TM

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC
12+
TO-263
15000
全新原裝,絕對正品,公司現貨供應。
 詢價
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
FAIRCHILD/仙童
21+
TO-263
30000
只做正品原裝現貨
 詢價
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
優(yōu)勢供應 實單必成 可13點增值稅
 詢價
FAIRCHILD/仙童
22+
D2-PAKTO-263
18000
原裝正品
 詢價
FAIRCHILD/仙童
23+
1
6500
專注配單,只做原裝進口現貨
 詢價
FAIRCHILD/仙童
23+
1
6500
專注配單,只做原裝進口現貨
 詢價
FAIRCHILD/仙童
23+
TO-263
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
TO-263
22+
6000
十年配單,只做原裝
 詢價
FAIRCHILD
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多FQB4N60TM供應商 更新時間2025-2-2 11:03:00

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