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FQI33N10

N-Channel QFET MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI33N10

100V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI33N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP33N10

N-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF33N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GLU33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GLX33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ISP33N10L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KSM33N10

100VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    FQI33N10

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-262AA

供應商型號品牌批號封裝庫存備注價格
仙童
05+
TO-262
2500
原裝進口
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FSC
23+
TO-262
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
FSC
21+
TO-262
1650
原裝現(xiàn)貨假一賠十
詢價
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD/仙童
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
FSC
TO-262
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
FAIRCHILD/仙童
23+
TO-262
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
FSC
0146+
TO-262
1000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FSC
23+
TO-262
28000
原裝正品
詢價
更多FQI33N10供應商 更新時間2024-12-22 9:16:00