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FQP12N60C中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書

FQP12N60C
廠商型號

FQP12N60C

功能描述

600V N-Channel MOSFET

文件大小

1.07433 Mbytes

頁面數(shù)量

9

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-12-22 23:00:00

FQP12N60C規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductor?s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

? 12A, 600V, RDS(on) = 0.65? @VGS = 10 V

? Low gate charge ( typical 48 nC)

? Low Crss ( typical 21 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號:

    FQP12N60C

  • 功能描述:

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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