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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFA4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFA4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFA4N100P	文件：333.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFA4N100Q	文件：333.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFA4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped	IXYS IXYS Corporation	IXYS
IXFH4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS
IXFH4N100Q	文件：90.61 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS
IXFH4N100Q	文件：372.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFP4N100	文件：295.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFP4N100P	文件：332.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFP4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100PM	文件：121.78 Kbytes Page：4 Pages	PolarHiperFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped	IXYS IXYS Corporation	IXYS
IXFP4N100Q	文件：149.11 Kbytes Page：4 Pages	HiperFETPowerMOSFETsQ-Class	IXYS IXYS Corporation	IXYS
IXFP4N100QM	文件：116.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETQ-Class	IXYS IXYS Corporation	IXYS
IXFR4N100Q	文件：370.08 Kbytes Page：3 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFR4N100Q	文件：81.23 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFT4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS
IXFT4N100Q	文件：90.61 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市利加科技有限公司	FQP4N100	FAIRCHILD	16+	TO-220	10000	全新原裝現(xiàn)貨	詢價
深圳市鑫宇楊電子科技有限公司	FQP4N100	FAIRCHILD	2020+	TO-220	210000	100%進口原裝正品公司現(xiàn)貨庫存	詢價
深圳市星佑電子有限公司	FQP4N20	仙童	06+	TO-220	5000	原裝	詢價
深圳市一線半導體有限公司	FQP4N20	FAIRCHILD	24+	TO-220	8866		詢價
深圳市勤思達科技有限公司	FQP4N20	FAIRCHIL	2015+	TO-220	12500	全新原裝,現(xiàn)貨庫存長期供應	詢價
深圳市博浩通科技有限公司	FQP4N20	FAIRCHIL	23+	TO-220	11000	全新原裝	詢價
深圳市鵬和科技有限公司	FQP4N20	FSC	24+	TO-220	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價
深圳市永貝爾科技有限公司	FQP4N20	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市鼎盛源芯科技有限公司	FQP4N20	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢	詢價
深圳市正邁科技有限公司	FQP4N20	FSC/ON	23+	原包裝原封□□	10753	原裝進口特價供應QQ1304306553更多詳細咨詢庫存	詢價

更多FQP4N100供應商更新時間2025-1-7 10:00:00

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