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IXFP4N100P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP4N100P

Polar HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFP4N100P

Power MOSFET

IXYS

IXYS Corporation

IXFP4N100PM

Polar HiperFET Power MOSFET

IXYS

IXYS Corporation

IXFP4N100Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped

IXYS

IXYS Corporation

IXFP4N100Q

HiperFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFP4N100QM

HiPerFETPowerMOSFETQ-Class

IXYS

IXYS Corporation

IXFR4N100Q

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR4N100Q

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFT4N100

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXFT4N100Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXGA4N100

ADVANCEDTECHNICALINFORMATION

Features ?InternationalstandardpackagesJEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandres

IXYS

IXYS Corporation

IXGP4N100

ADVANCEDTECHNICALINFORMATION

Features ?InternationalstandardpackagesJEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandres

IXYS

IXYS Corporation

RFP4N100

4.3A,1000V,3.500Ohm,HighVoltage,N-ChannelPowerMOSFETs

TheRFP4N100andRFP4N100SMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesignedforuseinapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhig

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RFP4N100

4.3A,1000V,3.500Ohm,HighVoltage,N-ChannelPowerMOSFETs

TheRFP4N100andRFP4N100SMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesignedforuseinapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhig

Intersil

Intersil Corporation

STP4N100

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEED

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP4N100FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEED

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

T4N100BW

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團ABB（中國）有限公司

T4N100CW

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團ABB（中國）有限公司

T4N100EW

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團ABB（中國）有限公司

詳細參數(shù)

  • 型號：

    IXFP4N100P

  • 功能描述：

    MOSFET 4 Amps 1000V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-220-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-220
325680
原裝正品 華強現(xiàn)貨
 詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-220
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2203
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多IXFP4N100P供應商 更新時間2025-1-3 16:36:00

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