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IXFR30N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR30N50

HiPerFET Power MOSFETs ISOPLUS247

IXYS

IXYS Corporation

IXFR30N50Q

HiPerFET Power MOSFETs ISOPLUS247

IXYS

IXYS Corporation

IXFT30N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFT30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV30N50PS

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFX30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX30N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXTH30N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?M

IXYS

IXYS Corporation

IXTH30N50L

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-247packaging ?Withlowgatedriverequirements ?Lowswitchingloss ?Lowon-stateresistance ?Easytodrive ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

IXTH30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTQ30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

IXTQ30N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTT30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    IXFR30N50

  • 制造商:

    IXYS

  • 制造商全稱:

    IXYS Corporation

  • 功能描述:

    HiPerFET Power MOSFETs ISOPLUS247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IXYS
18+
TO-247
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
10000
公司只做原裝正品
詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
IXYS
22+
ISOPLUS247?
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IXYS
21+
ISOPLUS247?
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
6000
原裝正品,支持實(shí)單
詢價(jià)
更多IXFR30N50供應(yīng)商 更新時(shí)間2024-12-23 9:01:00