零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FQPF7N60 | 600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FQPF7N60 | 600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperform | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
FQPF7N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | Intersil Intersil Corporation | Intersil | ||
14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS Harris Corporation | HARRIS | ||
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
600VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
600VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
600VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI |
詳細(xì)參數(shù)
- 型號:
FQPF7N60
- 功能描述:
MOSFET 600V N-Channel QFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220F |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
onsemi |
24+ |
TO-220F-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
FAIRCHILD |
24+ |
TO-220F |
8866 |
詢價 | |||
仙童 |
06+ |
TO-220F |
4000 |
原裝 |
詢價 | ||
FSC |
2015+ |
TO220F |
19898 |
專業(yè)代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
FAIRCHIL |
2015+ |
TO-220F |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
HJ替代 |
2011+ |
TO220F |
50000 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
FAIRCHIL |
23+ |
TO-220F |
12720 |
全新原裝 |
詢價 | ||
FAIRCHILD |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
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