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FQU2N100TU

N-Channel QFET? MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXGP2N100

HighVoltageIGBT

IXYS

IXYS Corporation

IXGP2N100A

HighVoltageIGBT

IXYS

IXYS Corporation

IXTA2N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTA2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTA2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTP2N100

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-Mod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP2N100P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7.5?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-M

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    FQU2N100TU

  • 功能描述：

    MOSFET 1000V/1.6A/N-CH

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
I-PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
2015+
42000
公司現(xiàn)貨庫存
 詢價
FAIRCHILD/仙童
24+
TO-251
28260
只做原廠渠道 可追溯貨源
 詢價
仙童
12+
TO-251
25200
只做原裝正品
 詢價
onsemi(安森美)
23+
TO-251-3
11346
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHILD/仙童
11+
TO-251
28260
深圳原裝進(jìn)口無鉛現(xiàn)貨
 詢價
FSC
24+
TO-251
5000
只做原裝公司現(xiàn)貨
 詢價
ONSemiconductor
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
更多FQU2N100TU供應(yīng)商 更新時間2025-3-11 19:05:00

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