首頁 >IXGP2N100>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXGP2N100

High Voltage IGBT

IXYS

IXYS Corporation

IXGP2N100

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1000V 4A 25W TO220AB

IXYS

IXYS Corporation

IXGP2N100A

High Voltage IGBT

IXYS

IXYS Corporation

IXGP2N100A

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1000V 4A 25W TO220AB

IXYS

IXYS Corporation

IXTA2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTA2N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTA2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTA2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTP2N100

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-Mod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTP2N100P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7.5?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-M

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTY2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTY2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KSMD2N100

1000VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU2N100

1000VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

TSM2N100CH

N-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM2N100CP

Advancedplanarprocess

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IXGP2N100

  • 制造商:

    IXYS

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.7V @ 15V,2A

  • 開關能量:

    560μJ(關)

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關)值:

    15ns/300ns

  • 測試條件:

    800V,2A,150 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應商器件封裝:

    TO-220-3

  • 描述:

    IGBT 1000V 4A 25W TO220AB

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS/艾賽斯
2022+
20
全新原裝 貨期兩周
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-220
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
22+
TO220AB
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
TO220AB
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
TO-220
6000
原裝正品,支持實單
詢價
IXYS
2022+
TO-220AB
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
更多IXGP2N100供應商 更新時間2024-12-31 13:34:00