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FQU12N20L

200V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU12N20L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU12N20TU

N-ChannelQFET?MOSFET200V,9A,280m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HM12N20D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

KSM12N20L

Lowlevelgatedriverequirementallowingdirect

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD12N20

200VH-ChannelMosfet

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD12N20L

200VLogicLevelN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU12N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTM12N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

詳細參數(shù)

  • 型號：

    FQU12N20L

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHIL
24+
TO-251
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
F
23+
TO-251
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
F
2020+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
VBsemi/臺灣微碧
21+
TO-251
1061
原裝現(xiàn)貨假一賠十
 詢價
F
22+
TO-251
6000
十年配單,只做原裝
 詢價
F
22+
TO-251
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
INFINEON/英飛凌
24+
TO-251
56000
公司進口原裝現(xiàn)貨 批量特價支持
 詢價
VBsemi/臺灣微碧
20+
TO-251
1061
進口原裝現(xiàn)貨,假一賠十
 詢價
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
更多FQU12N20L供應商 更新時間2025-3-5 17:06:00

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