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FQU12N20TU

N-ChannelQFET?MOSFET200V,9A,280m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HM12N20D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

KSM12N20L

Lowlevelgatedriverequirementallowingdirect

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD12N20

200VH-ChannelMosfet

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD12N20L

200VLogicLevelN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU12N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTM12N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP12N20

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP12N20

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP12N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RFM12N20

N-ChannelEnhancementModePowerFieldEffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFM12N20

12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

Intersil

Intersil Corporation

RFP12N20

N-ChannelEnhancementModePowerFieldEffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP12N20

12A,180Vand200V,0.250Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv

Intersil

Intersil Corporation

TS12N20CS

SingleN-Channel4.5VSpecifiedMicroSurf

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

ZXT12N20DX

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

DIODES

Diodes Incorporated

ZXT12N20DX

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

Zetex

Zetex Semiconductors

ZXT12N20DXTA

DUAL20VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic

Zetex

Zetex Semiconductors

詳細(xì)參數(shù)

  • 型號：

    FQU12N20LTU

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
FAIRCHILD/仙童
22+
I-PAKTO-251
18000
原裝正品
 詢價
FAIRCHILD/仙童
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價
FAIRCHILD/仙童
23+
TO-220F
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
24+
TO-251
60
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD
2016+
TO251
5562
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
FAIRCHILD
22+23+
TO251
11830
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
安森美
21+
12588
原裝現(xiàn)貨,價格優(yōu)勢
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
更多FQU12N20LTU供應(yīng)商 更新時間2024-12-31 16:00:00

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