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FQU1N50B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HM1N50MR

SilicoN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

KSMD1N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD1N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

MTD1N50E

TMOSPOWERFET1.0AMPERE500VOLTSRDS(on)=5.0OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N50E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD1N50E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

MTD1N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N50E

N??hannelTO??20PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP1N50E

TMOSPOWERFET1.0AMPERES500VOLTSRDS(on)=5.0OHM

TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP1N50E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX1N50E

PowerMOStransistorIsolatedversionfoPHP1N50E

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RM1N50

Highvoltagelinear120/220V6Wfullvoltagefilamentlampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V50Wfullvoltagefloodlightsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V10Wfullvoltagebulblampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

SSI1N50B

520VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SSP1N50A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSP1N50B

520VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數

  • 型號:

    FQU1N50B

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    500V N-Channel MOSFET

供應商型號品牌批號封裝庫存備注價格
FAIRCHIL
12+
TO-251
15000
全新原裝,絕對正品,公司現貨供應。
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FAIRCHILD/仙童
21+
TO-251
30000
只做正品原裝現貨
詢價
FAIRCHILD
24+
TO-251
9950
詢價
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原裝正品代理渠道價格優(yōu)勢
詢價
FAIRCHILD/仙童
21+
I-PAKTO-251
30000
優(yōu)勢供應 實單必成 可13點增值稅
詢價
FAIRCHI
21+
TO-251
12588
原裝正品,自己庫存 假一罰十
詢價
FAIRCHILD
20+
TO-251
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
FAIRCHILD/仙童
23+
TO-251
50000
全新原裝正品現貨,支持訂貨
詢價
FAIRCHILD/仙童
2022
TO-251
80000
原裝現貨,OEM渠道,歡迎咨詢
詢價
更多FQU1N50B供應商 更新時間2024-12-22 11:04:00