零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FQU1N50B | 500V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
SilicoN-ChannelPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
500VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
500VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TMOSPOWERFET1.0AMPERE500VOLTSRDS(on)=5.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N??hannelTO??20PowerMOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
TMOSPOWERFET1.0AMPERES500VOLTSRDS(on)=5.0OHM TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PowerMOStransistorIsolatedversionfoPHP1N50E GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Highvoltagelinear120/220V6Wfullvoltagefilamentlampsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
Highvoltagelinear120/220V50Wfullvoltagefloodlightsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
Highvoltagelinear120/220V10Wfullvoltagebulblampsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
520VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
520VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild |
詳細參數
- 型號:
FQU1N50B
- 制造商:
FAIRCHILD
- 制造商全稱:
Fairchild Semiconductor
- 功能描述:
500V N-Channel MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHIL |
12+ |
TO-251 |
15000 |
全新原裝,絕對正品,公司現貨供應。 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FAIRCHILD/仙童 |
21+ |
TO-251 |
30000 |
只做正品原裝現貨 |
詢價 | ||
FAIRCHILD |
24+ |
TO-251 |
9950 |
詢價 | |||
FAIRCHILD/仙童 |
23+ |
I-PAKTO-251 |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
優(yōu)勢供應 實單必成 可13點增值稅 |
詢價 | ||
FAIRCHI |
21+ |
TO-251 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
FAIRCHILD |
20+ |
TO-251 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-251 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
FAIRCHILD/仙童 |
2022 |
TO-251 |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 |
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