MTP1N50E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
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TMOS E?FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP1N50E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
O |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
ONSEMI/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
1942+ |
TO-220 |
9852 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價(jià) | ||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
VB |
TO220AB |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
VBSEMI/臺(tái)灣微碧 |
23+ |
TO-220 |
20000 |
原裝正品 歡迎咨詢 |
詢價(jià) | ||
原裝MOT |
24+ |
TO-220 |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
ON |
24+ |
N/A |
1000 |
詢價(jià) | |||
VBsemi/臺(tái)灣微碧 |
TO-220 |
399000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ON |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
