首頁>FQU13N06L>規(guī)格書詳情

FQU13N06L中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FQU13N06L
廠商型號

FQU13N06L

功能描述

N-Channel QFET? MOSFET 60 V, 11 A, 115 m廓

文件大小

916.61 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-20 8:50:00

人工找貨

FQU13N06L價格和庫存,歡迎聯(lián)系客服免費人工找貨

FQU13N06L規(guī)格書詳情

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

? 11 A, 60 V, RDS(on) = 115 m? (Max) @ VGS = 10 V, ID = 5.5 A

? Low Gate Charge (Typ. 4.8 nC)

? Low Crss (Typ. 17 pF)

? 100 Avalanche Tested

? Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers

產(chǎn)品屬性

  • 型號:

    FQU13N06L

  • 功能描述:

    MOSFET 60V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
FAIRCHI
20+
TO-251
100
進口原裝現(xiàn)貨,假一賠十
詢價
ON/安森美
23+
SMD
7000
詢價
FAIRCHILD/仙童
21+
TO-251
2556
詢價
ON
2022+
IPAK-3 / DPAK-3 STRAIGHT LEAD
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
FAIRCHI
2020+
TO-251
50
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
onsemi(安森美)
24+
TO2513
7350
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
FAIRCHILD/仙童
24+
TO-251
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
FAIRCHI
21+
TO-251
150
原裝現(xiàn)貨假一賠十
詢價
FAIRCHILD/仙童
22+
TO-251
100000
代理渠道/只做原裝/可含稅
詢價
FAIRCHILD/仙童
24+
NA/
3645
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價