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FQU2N60

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

600V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60C

N-Channel QFET MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,an

KERSEMI

Kersemi Electronic Co., Ltd.

FQU2N60C

N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQU2N60C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU2N60C

N-Channel QFET? MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60CTU

Low Gate Charge (Typ. 8.5 nC)

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N60CTU

Marking：FQU2N60C；Package：I-PAK；N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQU2N60C

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    FQU2N60

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    600V N-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
國產(chǎn)替代
2010
TO251-3
50000
只做全新原裝誠信經(jīng)營現(xiàn)貨長期供應(yīng)
 詢價
國產(chǎn)替代
2012
TO251-3
50000
全新原裝進口自己庫存優(yōu)勢
 詢價
FAIRCHIL
24+
TO-251
8866
詢價
FAIRCHILD
16+
TO-251
10000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
23+
TO251
7635
全新原裝優(yōu)勢
 詢價
FSC
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
FAIRCHILD
2020+
TO-251
210000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAI
2018+
TO251
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
FAIRCHI
21+
TO-251
12588
原裝正品,自己庫存 假一罰十
 詢價
更多FQU2N60供應(yīng)商 更新時間2025-3-3 15:53:00

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