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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FRL234H	文件：47.94 Kbytes Page：6 Pages	4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRL234R	文件：47.94 Kbytes Page：6 Pages	4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRM234	文件：49.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FRM234D	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRM234H	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRM234R	文件：48.69 Kbytes Page：6 Pages	7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRS234D	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRS234H	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FRS234R	文件：49.8 Kbytes Page：6 Pages	5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro	Intersil Intersil Corporation	Intersil
FSL234D	文件：46.03 Kbytes Page：8 Pages	4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R	文件：46.03 Kbytes Page：8 Pages	4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSPYE234F	文件：79.62 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPYE234R	文件：79.62 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSS234	文件：29.28 Kbytes Page：4 Pages	DC/DCConverterApplications Features ?LowON-resistance. ?4.0Vdrive. ?Ultrahigh-speedswitching.	SANYOSanyo Semicon Device 三洋三洋電機株式會社	SANYO
FSS234D	文件：45.39 Kbytes Page：8 Pages	6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS234R	文件：45.39 Kbytes Page：8 Pages	6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FT234XD	文件：1.20141 Mbytes Page：40 Pages	SinglechipUSBtoasynchronousserialdatatransferinterface	FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司	FTDI
FT234XD	文件：695.44 Kbytes Page：37 Pages	TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures	FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司	FTDI
FT234XDR	文件：695.44 Kbytes Page：37 Pages	TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures	FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司	FTDI
FT234XD-R	文件：695.44 Kbytes Page：37 Pages	USBtoBASICUARTIC	FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司	FTDI

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詳細參數(shù)

型號：
FRL234H
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市維爾達電子有限公司	FRL-236ND024/3WR18/782F	富士通	2023+	DIP	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市創(chuàng)新跡電子有限公司	FRL-236ND024/3WR18/782F	富士通	23+	DIP	5000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	FRL-236ND024/3WR18/782F	富士通	23+	DIP	5000	專注配單,只做原裝進口現(xiàn)貨	詢價
現(xiàn)代芯城（深圳）科技有限公司	FRL-236ND100/3WR1/644F-1		24+	N/A	60000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市弘揚芯城科技有限公司	FRL-236ND100/3WR18/782F-1-T	FUJITSU(富士通)	23+		6000	誠信服務，絕對原裝原盤	詢價
天津市博通航睿技術有限公司	FRL2512FR100TS	FOJAN			40		詢價
深圳市芯祺盛科技有限公司	FRL2512FR100TS	CKMTW	24+	SMD	1	C23-電容器	詢價
北京京北通宇電子元件有限公司	FRL2512FR100TS	FOJAN	24+	con	10	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index	詢價
深圳市德力誠信科技有限公司	FRL2512FR100TS	FOJAN	24+	con	38	國產(chǎn)代理品牌價格交期有優(yōu)勢歡迎詢價	詢價

更多FRL234H供應商更新時間2025-1-6 8:01:00

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