| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FRS234H | 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | |
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
DC/DCConverterApplications Features ?LowON-resistance. ?4.0Vdrive. ?Ultrahigh-speedswitching. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI |
詳細參數(shù)
- 型號：
FRS234H
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IPD |
23+ |
模塊 |
3562 |
詢價 | |||
IPD |
23+ |
模塊 |
620 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
IPDiACorporation |
21+ |
模塊 |
12588 |
原裝正品,一級品牌代理 |
詢價 | ||
IPD |
6000 |
面議 |
19 |
 專營模塊 |
詢價 | ||
IPD |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
IPD |
2018+ |
module |
6000 |
全新原裝正品現(xiàn)貨,假一賠佰 |
詢價 | ||
IPD |
24+ |
2173 |
公司大量全新正品 隨時可以發(fā)貨 |
詢價 | |||
IPD |
24+ |
模塊 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
IPD |
18+ |
MODULE |
13 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IPD |
22+ |
模塊 |
200 |
專營模塊 |
詢價 |
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