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FRL9130D

5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRL9130H

5A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRL9130R

5A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRM9130

SecondGenerationRadHardMOSFETResults

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FRM9130D

6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRM9130H

6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRM9130R

6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness

Intersil

Intersil Corporation

FRS9130D

6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRS9130H

6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRS9130R

6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FSL9130D

5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL9130R

5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9130D

6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSS9130R

6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

GFC9130

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

GM9130HV

3ALEDDriverwithDimmingControl

GAMMA

GAMMA electronics

HDM9130

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無(wú)錫市好達(dá)電子股份有限公司

I9130CFI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

I9130CYI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

IRF9130

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    FRL9130D

  • 制造商:

    INTERSIL

  • 制造商全稱(chēng):

    Intersil Corporation

  • 功能描述:

    5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

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21+
6947503731359
4600
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6150
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AMPHENOL/安費(fèi)諾
2420+
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183158
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15000
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TOSHIBA東芝
24+23+
SOT89
12580
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1535+
1000
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23+
10000
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22+
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5000
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23+
1000
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24+
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69000
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更多FRL9130D供應(yīng)商 更新時(shí)間2024-11-15 13:02:00