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首頁 >FRS9130D>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FRS9130D	文件：49.39 Kbytes Page：6 Pages	6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr	Intersil Intersil Corporation	Intersil
FRS9130H	文件：49.39 Kbytes Page：6 Pages	6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr	Intersil Intersil Corporation	Intersil
FRS9130R	文件：49.39 Kbytes Page：6 Pages	6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr	Intersil Intersil Corporation	Intersil
FSL9130D	文件：45.69 Kbytes Page：8 Pages	5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL9130R	文件：45.69 Kbytes Page：8 Pages	5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9130D	文件：44.98 Kbytes Page：8 Pages	6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic	Intersil Intersil Corporation	Intersil
FSS9130R	文件：44.98 Kbytes Page：8 Pages	6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic	Intersil Intersil Corporation	Intersil
GFC9130	文件：116.44 Kbytes Page：1 Pages	PChannelPowerMOSFET	GSG Gunter Seniconductor GmbH.	GSG
GM9130HV	文件：228.14 Kbytes Page：9 Pages	3ALEDDriverwithDimmingControl	GAMMA GAMMA electronics	GAMMA
HDM9130	文件：184.32 Kbytes Page：6 Pages	FrequencySynthesizer	SHOULDERShoulder 好達電子無錫市好達電子股份有限公司	SHOULDER
I9130CFI	文件：864.51 Kbytes Page：26 Pages	ISDCortex??M0ChipCorder	NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司	Nuvoton
I9130CYI	文件：864.51 Kbytes Page：26 Pages	ISDCortex??M0ChipCorder	NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司	Nuvoton
IRF9130	文件：58.5 Kbytes Page：7 Pages	-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET -12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe	Intersil Intersil Corporation	Intersil
IRF9130	文件：149.67 Kbytes Page：7 Pages	TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever	IRF International Rectifier	IRF
IRF9130	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導體	Samsung
IRF9130	文件：19.15 Kbytes Page：2 Pages	P-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF9130	文件：23.56 Kbytes Page：2 Pages	P??HANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF9130	文件：290.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF9130	文件：271.22 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-11A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF9130SMD	文件：20.72 Kbytes Page：2 Pages	P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB

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詳細參數

型號：
FRS9130D
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	FRS-9A13SMDH0710	FAST	23+	SMD	8215	現貨供應,當天可交貨!免費送樣,原廠技術支持!!!	詢價
深圳市弘揚芯城科技有限公司	FRS-9A13SMDH0710	FAST	23+	SMD	6000	誠信服務，絕對原裝原盤	詢價
現代芯城（深圳）科技有限公司	FRS-9A13SMDH0710		24+	N/A	51000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市艾宇欣科技有限公司	FRSHC6YL6	Panduit Corp	2010+	N/A	66	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
深圳市億順芯科技有限公司	FRSK1/5-K526/1731120403	FCT from Molex	2021+	母座	285000	專供連接器,軍工合格供應商!	詢價
貿澤芯城（深圳）電子科技有限公司	FRSONT019	PERICOM	23+	6-SMD	10000	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市航宇科工半導體有限公司	FRSONT038	DIODES(美臺)	21+	SMD-6	3460	航宇科工半導體-央企合格優(yōu)秀供方	詢價
上海市鑫鴻達電子	FRS-R-1	Cooper Bussmann	2022+		50	全新原裝貨期兩周	詢價
深圳市星佑電子有限公司	FRSR10	BUSSMANN/COO	06+	原廠原裝	4316	只做全新原裝真實現貨供應	詢價
深圳市賽美科科技有限公司	FRS-R-1-1/8	COOPER		DIP-2	35560	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價

更多FRS9130D供應商更新時間2025-1-13 23:00:00

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