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HDM9130

Frequency Synthesizer

SHOULDERShoulder

好達電子無錫市好達電子股份有限公司

I9130CFI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

I9130CYI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

IRF9130

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

Intersil

Intersil Corporation

IRF9130

TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9130

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9130SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE9130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe

IRF

International Rectifier

IRFE9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9130

SimpleDriveRequirements

IRF

International Rectifier

IRFF9130

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

IRF

International Rectifier

IRFF9130

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF9130

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFF9130

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRFNJ9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

詳細參數

  • 型號：

    HDM9130

  • 制造商：

    SHOULDER

  • 制造商全稱：

    SHOULDER

  • 功能描述：

    Frequency Synthesizer

供應商型號品牌批號封裝庫存備注價格
ASTEC
23+
模塊
130
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
ASTEC
23+
模塊
3562
詢價
ASTEC
6000
面議
19
 專營模塊
 詢價
ASTEC
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
ASTEC
2018+
module
6000
全新原裝正品現貨,假一賠佰
 詢價
ASTEC
18+
2173
公司大量全新正品 隨時可以發(fā)貨
 詢價
ASTEC
24+
模塊
6430
原裝現貨/歡迎來電咨詢
 詢價
ASTEC
2015
模塊
300
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
ASTEC
22+
SOT-2899&NBS
200
專營模塊
 詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現貨
 詢價
更多HDM9130供應商 更新時間2024-11-15 11:22:00

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