| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSS9130R | 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | |
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
3ALEDDriverwithDimmingControl | GAMMA GAMMA electronics | GAMMA | ||
FrequencySynthesizer | SHOULDERShoulder 好達電子無錫市好達電子股份有限公司 | SHOULDER | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET -12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe | Intersil Intersil Corporation | Intersil | ||
TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號：
FSS9130R
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
M&G(晨光文具) |
21+ |
6931747124015 |
4600 |
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者 |
詢價 | ||
ZETEX |
2016+ |
SOT23-5 |
6000 |
全新原裝現(xiàn)貨,量大價優(yōu),公司可售樣! |
詢價 | ||
MU |
23+ |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
MU |
23+ |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
MURATA/村田 |
18+ |
SMD |
288000 |
原裝正品價格優(yōu)勢 |
詢價 |
相關(guān)規(guī)格書
更多- FSS9130R1
- FSS9130R4
- FSS913A0D1
- FSS913A0R
- FSS913A0R3
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- FSS913AOR4
- FSS9230D1
- FSS9230D4
- FSS9230R1
- FSS9230R4
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- FSS923A0R
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- FSS923AOD1
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- FSSA151005RNN30S
- FSSD06_08
- FSSD06BQX
- FSSD06UMX
- FSSD07
- FSSD07BQX
- FSSD07UMX_F113
- FSSDC-9B506-EVB
- FSSDWE 2D9S FKSDWE 455-3.3-3-1
- FSSDWE D9S FKSDWE 455-5M-2M
- FSSK1P
- FSSK2P
- FSSK3P
- FSS-SMT_13
- FSST10001-1
- FSST221-3/8-BLK
- FST 321
- FST 5X20 FUSE 12.5A T
- FST-10
- FST100100
- FST10030
- FST10030_10
- FST10040
相關(guān)庫存
更多- FSS9130R3
- FSS913A0D
- FSS913A0D3
- FSS913A0R1
- FSS913A0R4
- FSS913AOD3
- FSS913AOR3
- FSS9230D
- FSS9230D3
- FSS9230R
- FSS9230R3
- FSS923A0D
- FSS923A0D3
- FSS923A0R1
- FSS923A0R4
- FSS923AOD3
- FSS923AOR3
- FSSA100008RN000T
- FSSA100Z55RN000T
- FSSA101005RNN00S
- FSSA150015RN000T
- FSSA151005RNN00S
- FSSD06
- FSSD06_12
- FSSD06BQX_12
- FSSD06UMX_12
- FSSD07_12
- FSSD07UMX
- FSSDC-9B506-EK
- FSSDWE 2D9S FKSDWE 455-2-0.5-1
- FSSDWE 455-1M
- FSSERIES
- FSSK1S
- FSSK2S
- FSS-SMT
- FSST0015
- FSST221-2-RED
- FST
- FST 5X20 FUSE 1.25A T
- FST 5X20 FUSE 125MA T
- FST-10.5C12
- FST10020
- FST-100-30
- FST10035
- FST10045
