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FSJ260D

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260D1

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260D3

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

FUZETECFuzetec Technology Co., Ltd.

富致科技富致科技股份有限公司

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

RFERFE international

RFE國際公司RFE國際股份有限公司

FSPYC260F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號:

    FSJ260D

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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H
18+
TO-220
185
進(jìn)口原裝正品優(yōu)勢供應(yīng)
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H
23+
TO-220
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
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H
21+
TO-220
645
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
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H
QQ咨詢
TO-220
64
全新原裝 研究所指定供貨商
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H
2318+
TO-220
4862
只做進(jìn)口原裝!假一賠百!自己庫存價優(yōu)!
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ISL
23+
65480
詢價
SAC
23+
NA/
960
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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THOMASBETTS/ANSLEY
3455
全新原裝 貨期兩周
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AMIS
22+
PLCC-20P
2000
進(jìn)口原裝!現(xiàn)貨庫存
詢價
更多FSJ260D供應(yīng)商 更新時間2025-2-2 14:15:00