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FSYE913A0R3中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FSYE913A0R3
廠商型號(hào)

FSYE913A0R3
功能描述

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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73.24 Kbytes
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9 頁(yè)
生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)
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數(shù)據(jù)手冊(cè)

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FSYE913A0R3規(guī)格書(shū)詳情

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

產(chǎn)品屬性

  • 型號(hào)：

    FSYE913A0R3

  • 制造商：

    INTERSIL

  • 制造商全稱(chēng)：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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