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HM3103

4A180KHz36VBuckDCtoDCConverter

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HO-NP-3103

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團(tuán)

HO-P-3103

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團(tuán)

HPLR3103

52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HPLR3103

52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

HPLU3103

52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HPLU3103

52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

HS3103

HighPerformanceRelativeHumidityandTemperatureSensor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103

HighPerformanceRelativeHumidityandTemperatureSensor

Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103

HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput

Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103

HighPerformanceRelativeHumidityandTemperatureSensor

Features ?Humidityrange:0to100RH ?Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) ?Hydrophobicmembrane,IP67rating ?14-bitresolution:0.01RH,typical ?Independentprogrammableresolutionsettings:8, 10,12,14bits ?FastRHresponsetime:1secondtimeconstant,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103-MCX

HighPerformanceRelativeHumidityandTemperatureSensorModule

Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IIRL3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIRLR3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IR3103

Half-BridgeFredFETandIntegratedDriver

Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr

IRF

International Rectifier

IRF3103

HEXFET?PowerMOSFET

InterFET

InterFET Corporation

IRL3103

PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRL3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRL3103L

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL3103L

PowerMOSFET(Vdss=30V,Rds(on)=12mohm,Id=64A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    G3103

  • 制造商:

    SPC Multicomp

  • 功能描述:

    BOX ABS IP65 100X100X90MM

  • 功能描述:

    BOX, ABS, IP65, 100X100X90MM

  • 功能描述:

    BOX, ABS, IP65, 100X100X90MM; Enclosure

  • Type:

    Multipurpose; Enclosure

  • Material:

    ABS; Body

  • Colour:

    Grey; External Height -

  • Imperial:

    3.54"; External Height -

  • Metric:

    90mm; External Width -

  • Imperial:

    3.94"; External Width -

  • Metric:

    100mm; ;RoHS

  • Compliant:

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GMT
21+
QFN
236
原裝現(xiàn)貨假一賠十
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GMT
22+
QFN
32350
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GMT
23+
QFN
50000
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GMT
1818+
QFN
236
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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GMT
23+
QFN
28000
原裝正品
詢價(jià)
GMT
23+
QFN
12800
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GMT
19+
TDFN3X2-8
6800
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GMT/致新
23+
VSSOP8
50000
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GMT/致新
22+
VSSOP8
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
GMT/致新
23+
VSSOP8
3100
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更多G3103供應(yīng)商 更新時(shí)間2024-11-15 10:04:00